Semiconductor Electronics · p-n junction and diodes
In a semiconductor p-n diode, the doping concentrations on p-side and n-side are atoms/ and atoms/ , respectively. Which one of the following statements is true?
- (1)Widths of depletion region on either side of the interface are equal
- (2)The depletion region width is more on p-side compared to that in n-side
- (3)The depletion region width is more on n-side compared to that in p-side
- (4)No depletion region forms because of unequal doping concentrations on p and n-sides
We corrected a printing error in the original paper
Source printed “Which one of the following statement is true?”.
Video solution coming soon
We're animating every PYQ step by step. Subscribe to get them first.
See the full 5 Apr 2026, Shift 2 paper
More on p-n junction and diodes
- 23 Jan 2026, Shift 1 · Q12The following diagram shows a Zener diode as a voltage regulator. The Zener diode is rated at VZ = 5V and the desired current in load is 5…
- 24 Jan 2026, Shift 1 · Q23A voltage regulating circuit consisting of Zener diode, having break-down voltage of 10 V and maximum power dissipation of 0.4 W, is…
- 28 Jan 2026, Shift 1 · Q10Assuming in forward bias condition there is a voltage drop of 0.7 V across a silicon diode, the current through diode D1 in the circuit is…
- 2 Apr 2026, Shift 1 · Q12For the given circuit (shown in part (A)) the time dependent input voltage vin(t) and corresponding output vo(t) are shown in part (B) and…
